Dual N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ 20V , 4.5A , RDS(ON)=30mΩ @VGS=4.5V. RDS(ON)=40mΩ @VGS=2.5V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ TSSOP-8 for Surface Mount Package.

文件：56.14 Kbytes 页数：5 Pages

CET

华瑞

Dual N-Channel Enhancement Mode Field Effect Transistor

CET

华瑞

Dual N-Channel Enhancement Mode Field Effect Transistor

Feature ● 20V/, 6A, RDS(ON) = 30mΩ(MAX) @VGS = 4.5V. RDS(ON) = 40mΩ(MAX) @VGS = 2.5V. ● Super High dense cell design for extremely low RDS(ON) . ● Reliable and Rugged. ● SOP-8 for Surface Mount Package.

文件：505.03 Kbytes 页数：5 Pages

CET

华瑞

Dual N-Channel 20-V (D-S) MOSFET

文件：986.07 Kbytes 页数：7 Pages

VBSEMI

微碧半导体

Dual N-Channel Enhancement Mode MOSFET

Feature ● 20V/6A, RDS(ON) = 33mΩ(MAX) @VGS = 4.5V. RDS(ON) = 50mΩ(MAX) @VGS = 2.5V. ● Super High dense cell design for extremely low RDS(ON) . ● Reliable and Rugged. ● SOP-8 for Surface Mount Package. Applications ● LI-ION Protection Circuit

文件：382.35 Kbytes 页数：2 Pages

ZPSEMIZP Semiconductor

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