CEI01N6资料使用说明书供应代理华瑞CET-114ic电子网

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型号	下载订购	功能描述	制造商上传企业	LOGO
CEI01N6	文件：85.87 Kbytes Page：4 Pages	N-Channel Enhancement Mode Field Effect Transistor 文件：85.87 Kbytes 页数：4 Pages	CET 华瑞	CET
CEK01N6G	文件：404.1 Kbytes Page：4 Pages	N-Channel Enhancement Mode Field Effect Transistor FEATURES ■ 600V, 1A, RDS(ON) = 9.3 Ω @VGS = 10V. ■ High dense cell design for extremely low RDS(ON). ■ Rugged and reliable. ■ Lead free product is acquired. ■ TO-92(Bulk) & TO-92(Ammopack) package. 文件：404.1 Kbytes 页数：4 Pages	CET 华瑞	CET
CEK01N6G	文件：613.93 Kbytes Page：4 Pages	N-Channel Enhancement Mode Field Effect Transistor FEATURES 600V, 1A, RDS(ON) = 9.3 W @VGS = 10V. High dense cell design for extremely low RDS(ON). Rugged and reliable. TO-92(Bulk) & TO-92(Ammopack) package. Lead free product is acquired. 文件：613.93 Kbytes 页数：4 Pages	CET-MOS 华瑞	CET-MOS
CEP01N6	文件：85.87 Kbytes Page：4 Pages	N-Channel Enhancement Mode Field Effect Transistor 文件：85.87 Kbytes 页数：4 Pages	CET 华瑞	CET

更多CEI01N6供应商更新时间2026-1-25 11:00:00