N-Channel Enhancement Mode Field Effect Transistor

N-Channel Enhancement Mode Field Effect Transistor FEATURES Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TO-220 & TO-263 & TO-262 package & TO-220F full-pak for through hole. Lead free product is acquired.

文件：134.8 Kbytes 页数：4 Pages

CET

华瑞

N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ 700V, 1.6A, RDS(ON) = 6.6Ω @VGS = 10V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead free product is acquired. ■ TO-251 & TO-252 package.

文件：122.66 Kbytes 页数：4 Pages

CET

华瑞

N-Channel Enhancement Mode Field Effect Transistor

VOLTAGE 700 Volts CURRENT 1.9 Ampere FEATURE * Small flat package. (D2PAK) * High density cell design for extremely low RDS(ON). * Rugged and reliable. APPLICATION * Servo motor control. * Power MOSFET gate drivers. * Other switching applications.

文件：221.37 Kbytes 页数：2 Pages

CHENMKO

力勤

N-Channel Enhancement Mode Field Effect Transistor

VOLTAGE 700 Volts CURRENT 1.6 Ampere FEATURE * Small package. (TO-252A) * Super high dense cell design for extremely low RDS(ON). * High power and current handing capability. APPLICATION * Servo motor control. * Power MOSFET gate drivers. * Other switching applications.

文件：197.22 Kbytes 页数：2 Pages

CHENMKO

力勤