N-Channel Enhancement Mode Field Effect Transistor

VOLTAGE 700 Volts CURRENT 1.9 Ampere FEATURE * Small flat package. (D2PAK) * High density cell design for extremely low RDS(ON). * Rugged and reliable. APPLICATION * Servo motor control. * Power MOSFET gate drivers. * Other switching applications.

文件：221.37 Kbytes 页数：2 Pages

CHENMKO

力勤

N-Channel Enhancement Mode Field Effect Transistor

Chenmko

力勤

N-Channel Enhancement Mode Field Effect Transistor

VOLTAGE 700 Volts CURRENT 1.6 Ampere FEATURE * Small package. (TO-252A) * Super high dense cell design for extremely low RDS(ON). * High power and current handing capability. APPLICATION * Servo motor control. * Power MOSFET gate drivers. * Other switching applications.

文件：197.22 Kbytes 页数：2 Pages

CHENMKO

力勤

Single-Ended Cordsets

Basic features Approval/Conformity CE EAC WEEE

文件：98.91 Kbytes 页数：2 Pages

Balluff

巴鲁夫

N-Channel Enhancement Mode Field Effect Transistor

N-Channel Enhancement Mode Field Effect Transistor FEATURES Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TO-220 & TO-263 & TO-262 package & TO-220F full-pak for through hole. Lead free product is acquired.

文件：134.8 Kbytes 页数：4 Pages

CET

华瑞

N-Channel Enhancement Mode Field Effect Transistor

N-Channel Enhancement Mode Field Effect Transistor FEATURES Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired.

文件：403.86 Kbytes 页数：4 Pages

CET

华瑞