N-Channel Enhancement Mode Field Effect Transistor

N-Channel Enhancement Mode Field Effect Transistor FEATURES Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TO-220 & TO-263 & TO-262 package & TO-220F full-pak for through hole. Lead free product is acquired.

文件：134.8 Kbytes 页数：4 Pages

CET

华瑞

N-Channel Enhancement Mode Field Effect Transistor

N-Channel Enhancement Mode Field Effect TransistorFEATURES\nSuper high dense cell design for extremely low RDS(ON).\nHigh power and current handing capability.\nTO-220 & TO-263 & TO-262 package & TO-220F full-pak for through hole.\nLead free product is acquired. Super high dense cell design for extremely low RDS(ON).\nHigh power and current handing capability.\nTO-220 & TO-263 & TO-262 package & TO-220F full-pak for through hole.\nLead free product is acquired.;

CET

华瑞

N-Channel Enhancement Mode Field Effect Transistor

N-Channel Enhancement Mode Field Effect Transistor FEATURES Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired.

文件：403.86 Kbytes 页数：4 Pages

CET

华瑞

N-Channel Enhancement Mode Field Effect Transistor

FEATURES Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired.

文件：625.85 Kbytes 页数：4 Pages

CET-MOS

华瑞

N Channel MOSFET

CET

华瑞