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AQV414E

PhotoMOS RELAYS

FEATURES 1. Low on resistance for normally closed type This has been realized thanks to the built in MOSFET processed by our proprietary method, DSD(Double-diffused and Selective Doping) method. 2. Controls low-level analog signals PhotoMOS relays feature extremely low closed-circuit offset vo

文件:54.95 Kbytes 页数:3 Pages

NAIS

松下电器

AQV414EA

PhotoMOS RELAYS

FEATURES 1. Low on resistance for normally closed type This has been realized thanks to the built in MOSFET processed by our proprietary method, DSD(Double-diffused and Selective Doping) method. 2. Controls low-level analog signals PhotoMOS relays feature extremely low closed-circuit offset vo

文件:54.95 Kbytes 页数:3 Pages

NAIS

松下电器

AQV414EAX

PhotoMOS RELAYS

FEATURES 1. Low on resistance for normally closed type This has been realized thanks to the built in MOSFET processed by our proprietary method, DSD(Double-diffused and Selective Doping) method. 2. Controls low-level analog signals PhotoMOS relays feature extremely low closed-circuit offset vo

文件:54.95 Kbytes 页数:3 Pages

NAIS

松下电器

AQV414EAZ

PhotoMOS RELAYS

FEATURES 1. Low on resistance for normally closed type This has been realized thanks to the built in MOSFET processed by our proprietary method, DSD(Double-diffused and Selective Doping) method. 2. Controls low-level analog signals PhotoMOS relays feature extremely low closed-circuit offset vo

文件:54.95 Kbytes 页数:3 Pages

NAIS

松下电器

AQV414EH

PhotoMOS RELAYS

FEATURES 1. Low on resistance for normally closed type This has been realized thanks to the built in MOSFET processed by our proprietary method, DSD(Double-diffused and Selective Doping) method. 2. Controls low-level analog signals PhotoMOS relays feature extremely low closed-circuit offset vo

文件:54.95 Kbytes 页数:3 Pages

NAIS

松下电器

AQV414EHA

PhotoMOS RELAYS

FEATURES 1. Low on resistance for normally closed type This has been realized thanks to the built in MOSFET processed by our proprietary method, DSD(Double-diffused and Selective Doping) method. 2. Controls low-level analog signals PhotoMOS relays feature extremely low closed-circuit offset vo

文件:54.95 Kbytes 页数:3 Pages

NAIS

松下电器

AQV414EHAX

PhotoMOS RELAYS

FEATURES 1. Low on resistance for normally closed type This has been realized thanks to the built in MOSFET processed by our proprietary method, DSD(Double-diffused and Selective Doping) method. 2. Controls low-level analog signals PhotoMOS relays feature extremely low closed-circuit offset vo

文件:54.95 Kbytes 页数:3 Pages

NAIS

松下电器

AQV414EHAZ

PhotoMOS RELAYS

FEATURES 1. Low on resistance for normally closed type This has been realized thanks to the built in MOSFET processed by our proprietary method, DSD(Double-diffused and Selective Doping) method. 2. Controls low-level analog signals PhotoMOS relays feature extremely low closed-circuit offset vo

文件:54.95 Kbytes 页数:3 Pages

NAIS

松下电器

AQV414E

固态继电器(MOS输出)

Panasonic

松下

AQV414E

Package:6-DIP(0.300",7.62mm);包装:散装 类别:继电器 固态继电器 描述:SSR RELAY DPST-NC 120MA 0-400V

Panasonic Electric Works

Panasonic Electric Works

产品属性

  • 产品编号:

    AQV414E

  • 制造商:

    Panasonic Electric Works

  • 类别:

    继电器 > 固态继电器

  • 系列:

    PhotoMOS™ AQV

  • 包装:

    散装

  • 安装类型:

    通孔

  • 电路:

    DPST-NC(2 Form B)

  • 输出类型:

    AC,DC

  • 电压 - 输入:

    1.25VDC

  • 端接样式:

    PC 引脚

  • 封装/外壳:

    6-DIP(0.300",7.62mm)

  • 供应商器件封装:

    6-DIP

  • 描述:

    SSR RELAY DPST-NC 120MA 0-400V

供应商型号品牌批号封装库存备注价格
NAIS
2025+
DIP
2500
原装进口价格优 请找坤融电子!
询价
NAIS
24+
DIP
6500
询价
NAIS
06+
DIP6
2000
询价
NAIS
25+
SOP
3000
强调现货,随时查询!
询价
NAIS
10+
DIP-6
7800
全新原装正品,现货销售
询价
Panasonic
24+
DIP6
5650
公司原厂原装现货假一罚十!特价出售!强势库存!
询价
NAIS
24+
DIP6
3500
原装现货,可开13%税票
询价
NAIS
17+
DIP
9888
全新进口原装,现货库存
询价
NAIS
1998
DIP
53843
原装现货海量库存欢迎咨询
询价
NAIS
22+
DIP
8200
原装现货库存.价格优势!!
询价
更多AQV414E供应商 更新时间2026-1-18 16:36:00