首页 >APM9926:PF9926P>规格书列表
| 零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
|---|---|---|---|---|
DualN-ChannelEnhancementModeMOSFET DualN-ChannelEnhancementModeMOSFET Features •20V/6A,RDS(ON)=28mΩ(typ.)@VGS=4.5V RDS(ON)=34mΩ(typ.)@VGS=2.5V •SuperHighDenseCellDesign •ReliableandRugged •LeadFreeAvailable(RoHSCompliant) Applications •PowerMana | ANPECAnpec Electronics Coropration 茂达电子茂达电子股份有限公司 | ANPEC | ||
DualN-ChannelEnhancementModeMOSFET DualN-ChannelEnhancementModeMOSFET Features •20V/6A,RDS(ON)=28mΩ(typ.)@VGS=4.5V RDS(ON)=34mΩ(typ.)@VGS=2.5V •SuperHighDenseCellDesign •ReliableandRugged •LeadFreeAvailable(RoHSCompliant) Applications •PowerMana | ANPECAnpec Electronics Coropration 茂达电子茂达电子股份有限公司 | ANPEC | ||
DualN-ChannelEnhancementModeMOSFET DualN-ChannelEnhancementModeMOSFET Features •20V/6A,RDS(ON)=28mΩ(typ.)@VGS=4.5V RDS(ON)=34mΩ(typ.)@VGS=2.5V •SuperHighDenseCellDesign •ReliableandRugged •LeadFreeAvailable(RoHSCompliant) Applications •PowerMana | ANPECAnpec Electronics Coropration 茂达电子茂达电子股份有限公司 | ANPEC | ||
DualN-ChannelEnhancementModeMOSFET DualN-ChannelEnhancementModeMOSFET Features •20V/6A,RDS(ON)=28mΩ(typ.)@VGS=4.5V RDS(ON)=34mΩ(typ.)@VGS=2.5V •SuperHighDenseCellDesign •ReliableandRugged •LeadFreeAvailable(RoHSCompliant) Applications •PowerMana | ANPECAnpec Electronics Coropration 茂达电子茂达电子股份有限公司 | ANPEC | ||
DualN-ChannelEnhancementModeMOSFET DualN-ChannelEnhancementModeMOSFET Features •20V/6A,RDS(ON)=28mΩ(typ.)@VGS=4.5V RDS(ON)=34mΩ(typ.)@VGS=2.5V •SuperHighDenseCellDesign •ReliableandRugged •LeadFreeAvailable(RoHSCompliant) Applications •PowerMana | ANPECAnpec Electronics Coropration 茂达电子茂达电子股份有限公司 | ANPEC | ||
N-ChannelEnhancementModeMOSFET N-ChannelEnhancementModeMOSFET Features •20V/6A,RDS(ON)=28mΩ(typ.)@VGS=4.5V RDS(ON)=38mΩ(typ.)@VGS=2.5V •SuperHighDenseCellDesignforExtremelyLowRDS(ON) •ReliableandRugged •SO-8andTSSOP-8Packages Applications •PowerManageme | ANPECAnpec Electronics Coropration 茂达电子茂达电子股份有限公司 | ANPEC | ||
N-ChannelEnhancementModeMOSFET N-ChannelEnhancementModeMOSFET Features •20V/6A,RDS(ON)=28mΩ(typ.)@VGS=4.5V RDS(ON)=38mΩ(typ.)@VGS=2.5V •SuperHighDenseCellDesignforExtremelyLowRDS(ON) •ReliableandRugged •SO-8andTSSOP-8Packages Applications •PowerManageme | ANPECAnpec Electronics Coropration 茂达电子茂达电子股份有限公司 | ANPEC | ||
N-ChannelEnhancementModeMOSFET N-ChannelEnhancementModeMOSFET Features •20V/6A,RDS(ON)=28mΩ(typ.)@VGS=4.5V RDS(ON)=38mΩ(typ.)@VGS=2.5V •SuperHighDenseCellDesignforExtremelyLowRDS(ON) •ReliableandRugged •SO-8andTSSOP-8Packages Applications •PowerManageme | ANPECAnpec Electronics Coropration 茂达电子茂达电子股份有限公司 | ANPEC | ||
N-ChannelEnhancementModeMOSFET N-ChannelEnhancementModeMOSFET Features •20V/6A,RDS(ON)=28mΩ(typ.)@VGS=4.5V RDS(ON)=38mΩ(typ.)@VGS=2.5V •SuperHighDenseCellDesignforExtremelyLowRDS(ON) •ReliableandRugged •SO-8andTSSOP-8Packages Applications •PowerManageme | ANPECAnpec Electronics Coropration 茂达电子茂达电子股份有限公司 | ANPEC | ||
N-ChannelEnhancementModeMOSFET N-ChannelEnhancementModeMOSFET Features •20V/6A,RDS(ON)=28mΩ(typ.)@VGS=4.5V RDS(ON)=38mΩ(typ.)@VGS=2.5V •SuperHighDenseCellDesignforExtremelyLowRDS(ON) •ReliableandRugged •SO-8andTSSOP-8Packages Applications •PowerManageme | ANPECAnpec Electronics Coropration 茂达电子茂达电子股份有限公司 | ANPEC | ||
N-ChannelEnhancementModePowerMOSFET | BellingSHANGHAI BELLING CO., LTD. 上海贝岭上海贝岭股份有限公司 | Belling | ||
N-ChannelLogicLevelEnhancementModeFieldEffectTransistor FEATURES ●20V,26A,RDS(ON)=30mΩ@VGS=4.5V. RDS(ON)=40m@VΩGS=2.5V. ●SuperhighdensecelldesignforextremelylowRDS(ON). ●Highpowerandcurrenthandlingcapability. ●TO-251&TO-252package. | CETChino-Excel Technology 华瑞华瑞股份有限公司 | CET | ||
DualN-ChannelEnhancementModeFieldEffectTransistor FEATURES ■20V,4.5A,RDS(ON)=30mΩ@VGS=4.5V. RDS(ON)=40mΩ@VGS=2.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■TSSOP-8forSurfaceMountPackage. | CETChino-Excel Technology 华瑞华瑞股份有限公司 | CET | ||
DualN-ChannelEnhancementModeFieldEffectTransistor Feature ●20V/,6A,RDS(ON)=30mΩ(MAX)@VGS=4.5V.RDS(ON)=40mΩ(MAX)@VGS=2.5V. ●SuperHighdensecelldesignforextremelylowRDS(ON). ●ReliableandRugged. ●SOP-8forSurfaceMountPackage. | CETChino-Excel Technology 华瑞华瑞股份有限公司 | CET | ||
DualN-Channel20-V(D-S)MOSFET | VBSEMIVBsemi Electronics Co.,Ltd 微碧半导体微碧半导体（台湾）有限公司 | VBSEMI | ||
DualN-ChannelEnhancementModeMOSFET Feature ●20V/6A,RDS(ON)=33mΩ(MAX)@VGS=4.5V.RDS(ON)=50mΩ(MAX)@VGS=2.5V. ●SuperHighdensecelldesignforextremelylowRDS(ON). ●ReliableandRugged. ●SOP-8forSurfaceMountPackage. Applications ●LI-IONProtectionCircuit | ZPSEMI ZP Semiconductor | ZPSEMI | ||
DualN-ChannelEnhancementModeFieldEffectTransistor FEATURES 20V,7A,RDS(ON)=25mW@VGS=4.5V. RDS(ON)=34mW@VGS=2.5V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. SurfacemountPackage. RoHScompliant. | CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司 | CET-MOS | ||
DualN-ChannelEnhancementModeFieldEffectTransistor | CETChino-Excel Technology 华瑞华瑞股份有限公司 | CET | ||
DualN-ChannelEnhancementModeFieldEffectTransistor FEATURES 20V,6A,RDS(ON)=27mW@VGS=4.5V. RDS(ON)=40mW@VGS=2.5V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. SurfacemountPackage. Leadfreeproductisacquired. | CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司 | CET-MOS | ||
DualN-ChannelEnhancementModeFieldEffectTransistor Features VDS(V)=20V ID=7A RDS(ON) | UMWUMW Rightway Semiconductor Co., Ltd. 友台半导体广东友台半导体有限公司(简称UMW?) | UMW |
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ANPEC |
2016+ |
SOP8 |
3000 |
只做原装,假一罚十,公司可开17%增值税发票! |
询价 | ||
APM |
1742+ |
SOP-8 |
98215 |
只要网上有绝对有货!只做原装正品! |
询价 | ||
APM |
22+ |
SOP8 |
8200 |
原装现货库存.价格优势!! |
询价 | ||
APM |
21+ |
SOP-8 |
12588 |
原装现货价格优势 |
询价 | ||
APM |
22+ |
SOP-8 |
21030 |
原装正品现货,可开13个点税 |
询价 | ||
ANPEC |
2020+ |
SOP8 |
80000 |
只做自己库存,全新原装进口正品假一赔百,可开13%增 |
询价 | ||
APM |
20+ |
SOP8 |
65300 |
一级代理/放心购买! |
询价 | ||
ANPEC/茂达电子 |
2048+ |
SOP8 |
9852 |
只做原装正品现货!或订货假一赔十! |
询价 | ||
ANPEC |
21+ |
SOP8 |
2293 |
原装现货假一赔十 |
询价 | ||
APM |
21+ |
SOP8 |
560000 |
询价 |
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