800V, 7.4A N-Channel MOSFET

General Description The AOT8N80 & AOTF8N80 have been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications.By providing low RDS(on), Ciss and Crss along with guaranteed avalanche capabilit

文件：354.83 Kbytes 页数：6 Pages

AOSMD

万国半导体

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 7.4A@ TC=25℃ ·Drain Source Voltage : VDSS= 800V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 1.63Ω(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC

文件：297.9 Kbytes 页数：2 Pages

ISC

无锡固电

800V, 7.4A N-Channel MOSFET

AOS

美国万代

800V, 7.4A N-Channel MOSFET

General Description The AOT8N80 & AOTF8N80 have been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications.By providing low RDS(on), Ciss and Crss along with guaranteed avalanche capabilit

文件：354.83 Kbytes 页数：6 Pages

AOSMD

万国半导体

isc N-Channel MOSFET Transistor

文件：265.48 Kbytes 页数：2 Pages

ISC

无锡固电

N-CHANNEL MOSFET in a TO-220FL Plastic Package

文件：1.13465 Mbytes 页数：6 Pages

FOSHAN

蓝箭电子