isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 10A@ TC=25℃ ·Drain Source Voltage : VDSS= 600V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.7Ω(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-D

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ISC

无锡固电

600V,10A N-Channel MOSFET

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AOSMD

万国半导体

MOSFET：N-Channel

AOS pioneered the fab-lite model in the Trench Power MOSFET field, developing leading-edge products that are exclusively manufactured in state-of-the-art 8-inch fabs. Advanced proprietary silicon and packaging processes are designed in AOS’s U.S. headquarters and are then produced with its very effi

AOS

美国万代

SQUARE-PAK, Dual Diodes, Ultra Fast Recovery, Low Forward Voltage Drop

* SQUARE-PAK TO263AB Case (SMD) Packaged in 24mm Tape and Reel * Dual Diodes – Cathode Common * Ultra – Fast Recovery * Low Forward Voltage Drop * High Surge Capability * 200 Volts thru 600 Volts Types Available

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NIEC

IGBT3 Chip

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INFINEON

英飞凌

IGBT3 Chip 600V Trench & Field Stop technology positive temperature coefficient

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INFINEON

英飞凌