SIGC10T60S

Integrated 3 Phase Gate Driver Chip product

1.1Features Thin-film-SOI-technology Insensitivityofthebridgeoutputtonegativetransientvoltagesupto-50V givenbySOI-technology Maximumblockingvoltage+600V Powersupplyofthehighsidedriversviabootstrap Integratedbootstrapfunctionality Separatecontrolcirc

SIGC10T60S

IGBT3 Chip 600V Trench & Field Stop technology positive temperature coefficient

SIGC10T60SE

TRENCHSTOPTM IGBT3 Chip

Features: 600Vtrench&fieldstoptechnology LowVCEsat Lowturn-offlosses Shorttailcurrent Positivetemperaturecoefficient Easyparalleling

AOB10T60P

600V,10AN-ChannelMOSFET

AOB10T60PL

RoHSandHalogenFreeCompliant

AOB10T60PL

RoHSandHalogenFreeCompliant

AOT10T60P

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=10A@TC=25℃ ·DrainSourceVoltage :VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.7Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-D

AOT10T60P

RoHSandHalogenFreeCompliant

AOT10T60P

600V,10AN-ChannelMOSFET

AOT10T60PL

RoHSandHalogenFreeCompliant