SIGC10T60S中文资料英飞凌数据手册PDF规格书

厂商型号	SIGC10T60S
功能描述	Integrated 3 Phase Gate Driver Chip product
文件大小	539.97 Kbytes
页面数量	17 页
生产厂商	Infineon
中文名称	英飞凌
网址	网址
数据手册	下载地址一下载地址二到原厂下载
更新时间	2025-12-15 16:49:00
人工找货	SIGC10T60S价格和库存，欢迎联系客服免费人工找货

1.1 Features

 Thin-film-SOI-technology

 Insensitivity of the bridge output to negative transient voltages up to -50V

given by SOI-technology

 Maximum blocking voltage +600V

 Power supply of the high side drivers via boot strap

 Integrated bootstrap functionality

 Separate control circuits for all six drivers

 CMOS and LSTTL compatible input (positive logic)

 Signal interlocking of every phase to prevent cross-conduction

 Detection of over-current and under-voltage supply

 'shut down' of all switches during error conditions

 65μs delay for fault clear after over current detection

型号：
SIGC10T60S
制造商：
INFINEON
制造商全称：
Infineon Technologies AG
功能描述：
IGBT3 Chip 600V Trench & Field Stop technology positive temperature coefficient