IGBT3 Chip

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IGBT3 Chip

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Integrated 3 Phase Gate Driver Chip product

1.1 Features  Thin-film-SOI-technology  Insensitivity of the bridge output to negative transient voltages up to -50V given by SOI-technology  Maximum blocking voltage +600V  Power supply of the high side drivers via boot strap  Integrated bootstrap functionality  Separate control circ

文件：539.97 Kbytes 页数：17 Pages

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TRENCHSTOPTM IGBT3 Chip

Features:  600V trench & field stop technology  Low VCEsat  Low turn-off losses  Short tail current  Positive temperature coefficient  Easy paralleling

文件：283.65 Kbytes 页数：9 Pages

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600V trench & field stop technology

文件：283.64 Kbytes 页数：9 Pages

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IGBT3 Chip 600V Trench & Field Stop technology positive temperature coefficient

文件：76.47 Kbytes 页数：4 Pages

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IGBT 裸片

我们的 TRENCHSTOP™ IGBT 结合了独特的沟槽和场截止技术，是行业的标杆 • 低关断损耗\n• 短尾电流\n• 正温度系数\n• 易于并联;

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IGBT裸片(400V-1200V)

The TRENCHSTOP™ IGBT combines the unique TRENCHSTOP™ and Fieldstop technology and is a benchmark in the industry. • Low turn-off losses\n• Short tail current\n• Positive temperature coefficient\n• Easy paralleling\n\n优势:;

Infineon

英飞凌