isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 12A@ TC=25℃ ·Drain Source Voltage : VDSS= 500V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.5Ω(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-D

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ISC

无锡固电

TO220F PACKAGE MARKING DESCRIPTION

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AOSMD

万国半导体

isc N-Channel MOSFET Transistor

文件：296 Kbytes 页数：2 Pages

ISC

无锡固电

MOSFET：N-Channel

AOS pioneered the fab-lite model in the Trench Power MOSFET field, developing leading-edge products that are exclusively manufactured in state-of-the-art 8-inch fabs. Advanced proprietary silicon and packaging processes are designed in AOS’s U.S. headquarters and are then produced with its very effi

AOS

美国万代

高压MOSFET (500V - 1000V)

Alpha and Omega Semiconductor采用先进的300mm（12英寸）和200mm(8英寸)工艺技术研发了600V和700V超结MOSFET。独有的硅晶圆和封装技术确保我们为各种应用案例定制差异化和合适的产品，包括服务器、笔记本电脑，电信、通用充电、工业、太阳能逆变器等。各种RDS(ON)的产品和丰富的产品封装类型（从通孔到SMT），使电源设计者在满足成本预算的同时实现效率和功率密度目标。

AOS

美国万代