场效应管MOSFET

MSKSEMI

美森科

Plastic Encapsulated Device

General Description The AOD4184/AOI4184 used advanced trench technology and design to provide excellent RDS(ON)with low gate charge. With the excellent thermal resistance of the DPAK package, those devices are well suited for high current load applications. Product Summary VDS 40V ID

文件：107.24 Kbytes 页数：5 Pages

AOSMD

万国半导体

N-Channel 40-V (D-S) MOSFET

文件：1.60867 Mbytes 页数：7 Pages

VBSEMI

微碧半导体

isc N-Channel MOSFET Transistor

文件：302.09 Kbytes 页数：2 Pages

ISC

无锡固电