P-Channel 30 V (D-S) MOSFET

FEATURES • TrenchFET® Power MOSFET • 100 Rg Tested APPLICATIONS • For Mobile Computing - Load Switch - Notebook Adaptor Switch - DC/DC Converter

文件：1.047579 Mbytes 页数：9 Pages

VBSEMI

微碧半导体

丝印：X1**；Package：SOT-23；P-Channel Enhancement Mode Field Effect Transistor

General Description The AO3401A/L uses advanced trench technology to provide excellent RDS(ON) , low gate charge and operation gate voltages as low as 2.5V. This device is suitable for use as a load switch or other general applications. AO3401A and AO3401AL are electrically identical. -RoHS Comp

文件：127.1 Kbytes 页数：4 Pages

AOSMD

万国半导体

P-Channel MOSFET

■ Features ● VDS (V) =-30V ● ID =-4 A (VGS =-10V) ● RDS(ON)

文件：1.34606 Mbytes 页数：4 Pages

KEXIN

科信电子

30V P-Channel MOSFET

General Description The AO3401A uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation gate voltages as low as 2.5V. This device is suitab le for use as a load switch or other general applications. Product Summary VDS -3

文件：725.9 Kbytes 页数：5 Pages

KERSEMI

丝印：X1PV；Package：SOT-23；P-Channel Enhancement MOSFET

Features ● VDS(V)=-30V ● ID=-4.2A(VGS=-10V) ● RDS(ON)

文件：1.87429 Mbytes 页数：5 Pages

UMW

友台半导体

P-Channel MOSFET

■ Features ● VDS (V) =-30V ● ID =-4 A (VGS =-10V) ● RDS(ON)

文件：1.81037 Mbytes 页数：4 Pages

KEXIN

科信电子

丝印：A1**；Package：SOT-23；P-Channel Enhancement Mode Field Effect Transistor

General Description The AO3401 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. Standard product AO3401 is Pb-free (meets ROHS & Sony 259 spe

文件：181.24 Kbytes 页数：4 Pages

AOSMD

万国半导体

P-Channel Enhancement MOSFET

■ Features ● VDS (V) =-30V ● ID =-4.2 A (VGS =-10V) ● RDS(ON)

文件：3.35325 Mbytes 页数：5 Pages

YFWDIODE

佑风微

Plastic-Encapsulate Mosfets

FEATURES ● The AO3402 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch applications.

文件：335.95 Kbytes 页数：4 Pages

HOTTECH

合科泰

N-Channel Enhancement Mode Field Effect Transistor

General Description The AO3402 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. AO3402L( Green Product ) is offered in a lead-free package. Featu

文件：715.88 Kbytes 页数：4 Pages

KERSEMI