N-Channel enhancement mode field effect transistor

■ Features ● VDS (V) = 30V ● ID = 5.8 A (VGS = 10V) ● RDS(ON) 28m (VGS = 10V) ● RDS(ON) 33m (VGS = 4.5V) ● RDS(ON) 52m (VGS = 2.5V)

文件：1.12086 Mbytes 页数：4 Pages

KEXIN

科信电子

N-Channel enhancement mode field effect transistor

■ Features ● VDS (V) = 30V ● ID = 5.7 A (VGS = 10V) ● RDS(ON)

文件：1.90137 Mbytes 页数：4 Pages

KEXIN

科信电子

N-Channel Enhancement Mode Field Effect Transistor

General Description The AO3400A uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a load switch or in PWM applications. Standard Product AO3400A is Pb-free (meets ROHS & Sony 259 specifications). Features • VDS (V) = 30V •

文件：279.75 Kbytes 页数：4 Pages

ALPHA

丝印：3400；Package：SOT-23；N-Channel Enhancement Mode Power MOSFET

Description The AO3400A uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features ● VDS = 30V,ID = 5.8A RDS(ON)

文件：914.26 Kbytes 页数：6 Pages

LEIDITECH

雷卯电子

30V N-Channel MOSFET

General Description The AO3400A combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON). This device is suitable for use as a load switch or in PWM applications. Product summary VDS 30V ID (at VGS=10V) 5.7A RDS(ON

文件：753.91 Kbytes 页数：5 Pages

KERSEMI

丝印：X0DV22；Package：SOT-23；N-Channel Enhancement Mode

Features VDS (V) = 30V ID = 5.8 A (VGS = 10V) RDS(ON) 27m (VGS = 10V) RDS(ON) 31m (VGS = 4.5V) RDS(ON) 48m (VGS = 2.5V)

文件：1.30392 Mbytes 页数：5 Pages

UMW

友台半导体

丝印：X0DV；Package：SOT-23；N-Channel Enhancement Mode

Features VDS (V) = 30V ID = 5.8 A (VGS = 10V) RDS(ON)

文件：1.53822 Mbytes 页数：5 Pages

UMW

友台半导体

N-Channel MOSFET

■ Features ● VDS (V) = 30V ● ID = 5.7 A (VGS = 10V) ● RDS(ON)

文件：2.41941 Mbytes 页数：4 Pages

KEXIN

科信电子

N-Channel Enhancement Mode Field Effect Transistor

General Description The AO3400 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. Standard Product AO3400 is Pb-free (meets ROHS & Sony 259 spec

文件：110.54 Kbytes 页数：4 Pages

AOSMD

万国半导体

P-Channel Enhancement Mode Field Effect Transistor

General Description The AO3401 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. Standard product AO3401 is Pb-free (meets ROHS & Sony 259 spe

文件：181.24 Kbytes 页数：4 Pages

AOSMD

万国半导体