AO3400

Marking：A0**；Package：SOT-23；N-Channel Enhancement Mode Field Effect Transistor

GeneralDescription TheAO3400usesadvancedtrenchtechnologytoprovideexcellentRDS(ON),lowgatechargeandoperationwithgatevoltagesaslowas2.5V.ThisdeviceissuitableforuseasaloadswitchorinPWMapplications.StandardProductAO3400isPb-free(meetsROHS&Sony259spec

AO3400

30V N-Channel Enhancement Mode MOSFET

30VN-ChannelEnhancementModeMOSFET VDS=30V RDS(ON),Vgs@10V,Ids@5.8A

AO3400

N-Channel enhancement mode field effect transistor

■Features ●VDS(V)=30V ●ID=5.8A(VGS=10V) ●RDS(ON)28m(VGS=10V) ●RDS(ON)33m(VGS=4.5V) ●RDS(ON)52m(VGS=2.5V)

AO3400

N- CHANNEL MOSFET in a SOT-23 Plastic Package

Descriptions N-CHANNELMOSFETinaSOT-23PlasticPackage. Features VDS(V)=30V ID=5.8A(VGS=10V) RDS(ON)

AO3400

N-Channel 30-V (D-S) MOSFET

FEATURES •Halogen-freeAccordingtoIEC61249-2-21 Definition •TrenchFET®PowerMOSFET •100RgTested •ComplianttoRoHSDirective2002/95/EC APPLICATIONS •DC/DCConverter

AO3400

Marking：A0H；Package：SOT23-3L；N-Channel Enhancement MOSFET

Features VDS(V)=30V ID=5.8A(VGS=10V) RDS(ON)m(VGS=10V) RDS(ON)3m(VGS=4.5V) RDS(ON)52m(VGS=2.5V)

AO3400

N-Channel Enhancement MOSFET

Features VDS(V)=30V ID=5.8A(VGS=10V) RDS(ON)

AO3400

30V N-Channel MOSFET

AO3400A

30V N-Channel MOSFET

GeneralDescription TheAO3400AcombinesadvancedtrenchMOSFETtechnologywithalowresistancepackagetoprovideextremelylowRDS(ON).ThisdeviceissuitableforuseasaloadswitchorinPWMapplications. Productsummary VDS30V ID(atVGS=10V)5.7A RDS(ON

AO3400A

N-Channel enhancement mode field effect transistor

■Features ●VDS(V)=30V ●ID=5.7A(VGS=10V) ●RDS(ON)