30V P-Channel Enhancement Mode MOSFET

30V P-Channel Enhancement Mode MOSFET VDS= -30V RDS(ON), Vgs@-10V, Ids@-4.2A

文件：1.4447 Mbytes 页数：3 Pages

HTSEMI

金誉半导体

P-Channel Enhancement MOSFET

■ Features ● VDS (V) =-30V ● ID =-4.2 A (VGS =-10V) ● RDS(ON)

文件：1.56526 Mbytes 页数：4 Pages

KEXIN

科信电子

P-Channel Enhancement Mode MOSFET

Feature ● -30V/-4.2A, RDS(ON) =55mΩ(MAX) @VGS = -10V. RDS(ON) = 70mΩ(MAX) @VGS = -4.5V. RDS(ON) =120mΩ(MAX) @VGS = -2.5V. ● Super High dense cell design for extremely low RDS(ON) ● Reliable and Rugged ● SOT-23 for Surface Mount Package Applicati

文件：356.09 Kbytes 页数：5 Pages

ZPSEMIZP Semiconductor

至尚臻品

P-Channel 30 V (D-S) MOSFET

FEATURES • TrenchFET® Power MOSFET • 100 Rg Tested APPLICATIONS • For Mobile Computing - Load Switch - Notebook Adaptor Switch - DC/DC Converter

文件：1.04766 Mbytes 页数：9 Pages

VBSEMI

微碧半导体

P-Channel Enhancement Mode Field Effect Transistor

AO3401(4.2A) P-Channel MOSFET P-Channel Enhancement Mode Field Effect Transistor

文件：1.13665 Mbytes 页数：3 Pages

YIXIN

壹芯微

丝印：B1H；Package：SOT23-3L；P-Channel Enhancement MOSFET

Features VDS (V) =-30V ID =-4.2 A (VGS =-10V) RDS(ON)

文件：1.60001 Mbytes 页数：5 Pages

YFWDIODE

佑风微

Plastic-Encapsulate Mosfets

P-Channel MOSFET FEATURES • The AO3401 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. • This device is suitable for use as a load switch or in PWM applications.

文件：443.28 Kbytes 页数：4 Pages

HOTTECH

合科泰

P-Channel Enhancement Mode Field Effect Transistor

General Description The AO3401 uses advanced trench technology to provide excellent RDS(ON) , low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. Standard product KSM3401 is Pb-free (meets ROHS & Sony 259 sp

文件：733.96 Kbytes 页数：4 Pages

KERSEMI

丝印：A19T；Package：SOT-23；P-Channel Enhancement Mode Power MOSFET

General Features VDs = -30V.ID = -4.2A RDS(ON)

文件：3.79248 Mbytes 页数：6 Pages

TECHPUBLIC

台舟电子

P-Enhancement Field Effect Transistor

Features High density cell design for ultra low RDS(ON) Fully characterized avalanche voltage and current Excellent package for good heat dissipation Applications Power switching application Hard switched and high frequency circuits Uninterruptible power supply

文件：985.9 Kbytes 页数：4 Pages

EVVOSEMI

翊欧