丝印：A1**；Package：SOT-23；P-Channel Enhancement Mode Field Effect Transistor

General Description The AO3401 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. Standard product AO3401 is Pb-free (meets ROHS & Sony 259 spe

文件：181.24 Kbytes 页数：4 Pages

AOSMD

万国半导体

MOSFET

MTW

美台微

SOT-23-3L -30V P-Channel MOSFET

类型: 1个P沟道\n漏源电压(Vdss): 30V\n连续漏极电流(Id): 4.2A

FOSAN

富信半导体

1.5MHZ, 1A STEP-DOWN DC - DC BUCK CONVERTER

文件：933.17 Kbytes 页数：11 Pages

DIODES

美台半导体

Plastic-Encapsulate MOSFETS

FEATURE High dense cell design for extremely low RDS(ON). Exceptional on-resistance and maximum DC current capability APPLICATION Load/Power Switching Interfacing Switching

文件：845.59 Kbytes 页数：4 Pages

GWSEMI

唯圣电子

Plastic-Encapsulate MOSFETS

Features VDS (V) = -30V ID = -4.2 A (VGS = -10V) RDS(ON)

文件：843.06 Kbytes 页数：5 Pages

GWSEMI

唯圣电子