MOSFET 20V P-CHANNEL ENHANCEMENT MODE

DESCRIPTION The AM2309 is available in SOT-23S package. FEATURES  VDS = -20V RDS(ON), VGS@-4.5V, IDS@-2.8A =100mΩ RDS(ON), VGS@-2.5V, IDS@-2.0A =150mΩ  Advanced trench process technology  High Density Cell Design For Ultra Low On-Resistance  Fully Characterized Avalanche Voltage and

文件：446.69 Kbytes 页数：7 Pages

AITSEMI

创瑞科技

MOSFET 20V P-CHANNEL ENHANCEMENT MODE

DESCRIPTION The AM2309 is available in SOT-23S package. FEATURES  VDS = -20V RDS(ON), VGS@-4.5V, IDS@-2.8A =100mΩ RDS(ON), VGS@-2.5V, IDS@-2.0A =150mΩ  Advanced trench process technology  High Density Cell Design For Ultra Low On-Resistance  Fully Characterized Avalanche Voltage and

文件：446.69 Kbytes 页数：7 Pages

AITSEMI

创瑞科技

传感器

AOSONG

上传：齐创科技(上海,北京,青岛)有限公司

LGA44

AM

上传：深圳市富芯乐电子科技有限公司

原厂封装

TI/德州仪器

上传：深圳市腾胜芯科技有限公司