AM2323P

P-Channel 20-V (D-S) MOSFET

AP2323GN-HF

Capableof1.8VGateDrive,SmallPackageOutline

APM2323A

P-ChannelEnhancementModeMOSFET

Features •-20V/-1.5A, RDS(ON)=130mΩ(typ.)@VGS=-4.5V RDS(ON)=170mΩ(typ.)@VGS=-2.5V •SuperHighDenseCellDesign •ReliableandRugged •LeadFreeAvailable(RoHSCompliant) Applications •PowerManagementinNotebookComputer,PortableEquipmentandBatteryPoweredSystems

APM2323AAC-TRL

P-Channel20-V(D-S)MOSFET

APM2323AC-TR

P-ChannelEnhancementModeMOSFET

Features •-20V/-1.5A, RDS(ON)=130mΩ(typ.)@VGS=-4.5V RDS(ON)=170mΩ(typ.)@VGS=-2.5V •SuperHighDenseCellDesign •ReliableandRugged •LeadFreeAvailable(RoHSCompliant) Applications •PowerManagementinNotebookComputer,PortableEquipmentandBatteryPoweredSystems

APM2323AC-TRL

P-ChannelEnhancementModeMOSFET

Features •-20V/-1.5A, RDS(ON)=130mΩ(typ.)@VGS=-4.5V RDS(ON)=170mΩ(typ.)@VGS=-2.5V •SuperHighDenseCellDesign •ReliableandRugged •LeadFreeAvailable(RoHSCompliant) Applications •PowerManagementinNotebookComputer,PortableEquipmentandBatteryPoweredSystems

CES2323

P-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■-30V,-4.1A,RDS(ON)=48mΩ@VGS=-10V. RDS(ON)=80mΩ@VGS=-4.5V. ■HighdensecelldesignforextremelylowRDS(ON). ■Ruggedandreliable. ■Leadfreeproductisacquired. ■SOT-23package.

CHM2323PT

P-ChannelEnhancementModeFieldEffectTransistor

VOLTAGE30VoltsCURRENT4.1Ampere FEATURE *Smallflatpackage.(SC-59) *HighdensitycelldesignforextremelylowRDS(ON). *Ruggedandreliable. *Highsaturationcurrentcapability. APPLICATION *Servomotorcontrol. *PowerMOSFETgatedrivers. *Otherswitchingapplications.

CM2323

T-13/4Bi-PinBase(.125)

T-13/4Bi-PinBase(.125)

CM2323

T-13/4Bi-PinBase(.125)