MOSFET 20V N-CHANNEL ENHANCEMENT MODE

DESCRIPTION The AM2312 is available in SOT-23S package. FEATURES  VDS= 20V RDS(ON), VGS@4.5V, IDS@5.0A = 41mΩ RDS(ON), VGS@2.5V, IDS@4.5A = 47mΩ  Advanced trench process technology  High Density Cell Design For Ultra Low On-Resistance  Capable of 2.5V gate drive  Lower on-resistanc

文件：464.65 Kbytes 页数：8 Pages

AITSEMI

创瑞科技

SOT-23/SOT-23S 晶體管

AiT-Semi

创瑞科技

MOSFET 20V N-CHANNEL ENHANCEMENT MODE

DESCRIPTION The AM2312 is available in SOT-23S package. FEATURES  VDS= 20V RDS(ON), VGS@4.5V, IDS@5.0A = 41mΩ RDS(ON), VGS@2.5V, IDS@4.5A = 47mΩ  Advanced trench process technology  High Density Cell Design For Ultra Low On-Resistance  Capable of 2.5V gate drive  Lower on-resistanc

文件：464.65 Kbytes 页数：8 Pages

AITSEMI

创瑞科技

MOSFET 20V N-CHANNEL ENHANCEMENT MODE

DESCRIPTION The AM2312 is available in SOT-23S package. FEATURES  VDS= 20V RDS(ON), VGS@4.5V, IDS@5.0A = 41mΩ RDS(ON), VGS@2.5V, IDS@4.5A = 47mΩ  Advanced trench process technology  High Density Cell Design For Ultra Low On-Resistance  Capable of 2.5V gate drive  Lower on-resistanc

文件：464.65 Kbytes 页数：8 Pages

AITSEMI

创瑞科技

N-Channel 20-V (D-S) MOSFET

文件：317.05 Kbytes 页数：5 Pages

ANALOGPOWER