MOSFET P-CHANNEL ENHANCEMENT MODE MOSFET

DESCRIPTION AM2319 is available in a SOT-23S package. FEATURES  -40V/-3A, RDS(ON)= 80mΩ(max.) @ VGS= -10V RDS(ON)= 120mΩ(max.) @ VGS= -4.5V  Reliable and Rugged  Lead Free and Green Devices Available (RoHS Compliant)  Available in a SOT-23S package. APPLICATION  Load Switch. 

文件：533.4 Kbytes 页数：9 Pages

AITSEMI

创瑞科技

低压MOS管

AiT-Semi

创瑞科技

MOSFET P-CHANNEL ENHANCEMENT MODE MOSFET

FEATURES  Fast Switching  1.8V Lo w gate drive applications  Improved dv/dt capability  20 V/ 4.2 A, RDS(ON) ON)= 35 mΩ( Typ ) @ V GS = 10V RDS(ON) ON)= 43 mΩ( Typ ) @ V GS = 4.5V RDS(ON) ON)= 57 mΩ( Typ ) @ V GS = 2 .5V RDS(ON) ON)= 80 mΩ( Typ ) @ V GS = 1.8 V  Reliable and Rugged

文件：597.97 Kbytes 页数：8 Pages

AITSEMI

创瑞科技

MOSFET P-CHANNEL ENHANCEMENT MODE MOSFET

DESCRIPTION AM2319 is available in a SOT-23S package. FEATURES  -40V/-3A, RDS(ON)= 80mΩ(max.) @ VGS= -10V RDS(ON)= 120mΩ(max.) @ VGS= -4.5V  Reliable and Rugged  Lead Free and Green Devices Available (RoHS Compliant)  Available in a SOT-23S package. APPLICATION  Load Switch. 

文件：533.4 Kbytes 页数：9 Pages

AITSEMI

创瑞科技

MOSFET P-CHANNEL ENHANCEMENT MODE MOSFET

DESCRIPTION AM2319 is available in a SOT-23S package. FEATURES  -40V/-3A, RDS(ON)= 80mΩ(max.) @ VGS= -10V RDS(ON)= 120mΩ(max.) @ VGS= -4.5V  Reliable and Rugged  Lead Free and Green Devices Available (RoHS Compliant)  Available in a SOT-23S package. APPLICATION  Load Switch. 

文件：533.4 Kbytes 页数：9 Pages

AITSEMI

创瑞科技

P - Channel Logic Level MOSFET

P - Channel Logic Level MOSFET These miniature surface mount MOSFETs utilize High Cell Density process. Low rDS(on) assures minimal power loss and conserves energy, making this device ideal for use in power management circuitry. Typical applications are voltage control small signal switch, power

文件：292.16 Kbytes 页数：6 Pages

ANALOGPOWER

P-Channel 30 V (D-S) MOSFET

文件：1.04802 Mbytes 页数：9 Pages

VBSEMI

微碧半导体

MOSFET

AnalogPower

美商亚柏