MOSFET P-CHANNEL ENHANCEMENT MODE MOSFET

FEATURES  Fast Switching  1.8V Lo w gate drive applications  Improved dv/dt capability  20 V/ 4.2 A, RDS(ON) ON)= 35 mΩ( Typ ) @ V GS = 10V RDS(ON) ON)= 43 mΩ( Typ ) @ V GS = 4.5V RDS(ON) ON)= 57 mΩ( Typ ) @ V GS = 2 .5V RDS(ON) ON)= 80 mΩ( Typ ) @ V GS = 1.8 V  Reliable and Rugged

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AITSEMI

创瑞科技

P - Channel Logic Level MOSFET

P - Channel Logic Level MOSFET These miniature surface mount MOSFETs utilize High Cell Density process. Low rDS(on) assures minimal power loss and conserves energy, making this device ideal for use in power management circuitry. Typical applications are voltage control small signal switch, power

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AnalogPower

Super high density cell design for extremely low RDS(ON)

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AMS

Using the 64-bit UID in contactless RFID applications

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STMICROELECTRONICS

意法半导体