AM2319A

MOSFET P-CHANNEL ENHANCEMENT MODE MOSFET

FEATURES FastSwitching 1.8VLowgatedriveapplications Improveddv/dtcapability 20V/4.2A, RDS(ON)ON)=35mΩ(Typ)@VGS=10V RDS(ON)ON)=43mΩ(Typ)@VGS=4.5V RDS(ON)ON)=57mΩ(Typ)@VGS=2.5V RDS(ON)ON)=80mΩ(Typ)@VGS=1.8V ReliableandRugged

AM2319P

P-ChannelLogicLevelMOSFET

P-ChannelLogicLevelMOSFET TheseminiaturesurfacemountMOSFETsutilizeHighCellDensityprocess.LowrDS(on)assuresminimalpowerlossandconservesenergy,makingthisdeviceidealforuseinpowermanagementcircuitry.Typicalapplicationsarevoltagecontrolsmallsignalswitch,power

AMS2319

SuperhighdensitycelldesignforextremelylowRDS(ON)

AN2319

Usingthe64-bitUIDincontactlessRFIDapplications

AP2319GN-HF

SimpleDriveRequirement,SmallPackageOutline

C-2319

InsulKrimp??FullyInsulatedPiggybackQuickDisconnect,Tab6.35mm(.250)by0.81mm(.032),10-12AWG,BlueInsulator,Tape

CM2319

T-13/4Bi-PinBase(.125)

CM2319

T-13/4Bi-PinBase(.125)

T-13/4Bi-PinBase(.125)

CPB2319-P

PiezoBuzzer(DC)

CPB2319-W

PiezoBuzzer(DC)