AM2317AE3SR数据手册批发供应创瑞科技-114ic电子网

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型号	下载订购	功能描述	制造商上传企业	LOGO
AM2317AE3SR	文件：651.7 Kbytes Page：8 Pages	MOSFET P-CHANNEL ENHANCEMENT MODE POWER MOSFET DESCRIPTION AM2317A is the P-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced trench technology devices are well suited for high efficiency fast switching applications, low in-line power loss are needed in small outline surface mount package. 文件：651.7 Kbytes 页数：8 Pages	AITSEMI 创瑞科技	AITSEMI
AM2317AE3SVR	文件：651.7 Kbytes Page：8 Pages	MOSFET P-CHANNEL ENHANCEMENT MODE POWER MOSFET DESCRIPTION AM2317A is the P-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced trench technology devices are well suited for high efficiency fast switching applications, low in-line power loss are needed in small outline surface mount package. 文件：651.7 Kbytes 页数：8 Pages	AITSEMI 创瑞科技	AITSEMI
AM2320	文件：0 bytes Page：0 Pages	传感器	AOSONG 上传：齐创科技(上海,北京,青岛)有限公司	AOSONG
AM2401G	文件：0 bytes Page：0 Pages	LGA44	AM 上传：深圳市富芯乐电子科技有限公司	AM
AM2631CNDGHAZCZR	文件：0 bytes Page：0 Pages	原厂封装	TI/德州仪器上传：深圳市腾胜芯科技有限公司	TI/德州仪器

更多AM2317AE3SR供应商更新时间2026-1-26 17:33:00