P-Channel 80-V (D-S) MOSFET

文件：71.17 Kbytes 页数：3 Pages

ANALOGPOWER

MOSFET

AnalogPower

美商亚柏

Complementary Silicon Gate MOSFETs Enhancement Mode, High Speed Switch

Description: The NTE2380 (N–Ch) and NTE2381 (P–Ch) are complementary TMOS power FETs in a TO220 type package designed for high voltage, high speed power switching applications such as switching regulators, converters, solenoid, and relay drivers. Features: • Silicon Gate for Fast Switch

文件：29.58 Kbytes 页数：3 Pages

NTE

PCS/CELLULAR TDMA/CDMA/W-CDMA LINEAR VARIABLE GAIN AMPLIFIER

Product Description The RF2381 is a linear variable gain amplifier suitable for use in TDMA and CDMA systems in the cellular or PCS band and for W-CDMA systems. The features of this device include linear gain control, high gain, and high linearity. The IC is manufactured on an advanced Gallium Ar

文件：102.1 Kbytes 页数：8 Pages

RFMD

威讯联合

PCS/CELLULAR TDMA/CDMA/W-CDMA LINEAR VARIABLE GAIN AMPLIFIER

Product Description The RF2381 is a linear variable gain amplifier suitable for use in TDMA and CDMA systems in the cellular or PCS band and for W-CDMA systems. The features of this device include linear gain control, high gain, and high linearity. The IC is manufactured on an advanced Gallium Ar

文件：102.1 Kbytes 页数：8 Pages

RFMD

威讯联合