AM2317AE3SR中文资料创瑞科技数据手册PDF规格书

DESCRIPTION

AM2317A is the P-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced trench technology devices are well suited for high efficiency fast switching applications, low in-line power loss are needed in small outline surface mount package.

The AM2317A is available in SOT-23S package.

FEATURES

 VDS = -20V, ID = -4.2A

RDS(ON)=38mΩ(Typ.)@VGS=-10V

RDS(ON)=45mΩ(Typ.)@VGS=-4.5V

RDS(ON)=60mΩ(Typ.)@VGS=-2.5V

RDS(ON)=80mΩ(Typ.)@VGS=-1.8V

 Fast switch

 1.8V Low gate drive applications

 High power and current handling capability

 Available in SOT-23S Package

APPLICATIONS

 Hand-Held Instruments

 Load Switch