丝印：A12M1T080；Package：PG-TO247-4-STD-NT6.7；CoolSiC™ 1200 V SiC Trench MOSFET

Features • VDSS = 1200 V at Tvj = -55...175°C • IDDC = 31 A at TC = 25°C • RDS(on) = 80 mΩ at VGS = 20 V, Tvj = 25°C • New performance-optimized chip technology (Gen1p) with improved RDSon* A FOM • Increased recommended turn-on voltage (VGS(on) = 20 V) for lower RDS(on) • Best in class switc

文件：1.7576 Mbytes 页数：15 Pages

Infineon

英飞凌

汽车级 1200V 碳化硅 (SiC) 沟槽功率 MOSFET，采用 TO247-4L（细引线），80mΩ

凭借英飞凌性能优化的芯片技术 (Gen1p)，SiC Mosfet 具有一流的开关性能、抗寄生导通的稳健性以及改进的 RDSon 和 Rth(jc)。高功率密度、卓越的效率、双向充电功能以及显著降低的系统成本使其成为车载充电器和 DCDC 应用的理想选择。 • 极低的开关损耗\n• 更高的开启电压 VGS(on)= 20 V\n• 同类最佳的开关能量\n• 最低的器件电容\n• 低 Crss/Ciss 比和高 VGS(th)，可避免寄生开启\n• 降低总栅极电荷 QGtot，从而降低驱动功率和损耗\n• .XT 芯片贴装技术，实现同类最佳的热性能\n• 感测引脚，可优化开关性能\n• 适合高压爬电距离要求\n• 更细的引线，可降低焊桥风险;

Infineon

英飞凌

CoolSiC™ 1200 V SiC Trench MOSFET

Features • VDSS = 1200 V at Tvj = -55...175°C • IDDC = 31 A at TC = 25°C • RDS(on) = 80 mΩ at VGS = 20 V, Tvj = 25°C • New performance-optimized chip technology (Gen1p) with improved RDSon* A FOM • Increased recommended turn-on voltage (VGS(on) = 20 V) for lower RDS(on) • Best in class switc

文件：1.79801 Mbytes 页数：15 Pages

Infineon

英飞凌

CoolSiC™ 1200 V SiC Trench MOSFET

Features • VDSS = 1200 V at Tvj = -55...175 °C • IDDC = 30 A at TC = 25°C • RDS(on) = 80 mΩ at VGS = 20 V, Tvj = 25°C • New performance-optimized chip technology (Gen1p) with improved RDSon* A FOM • Best in class switching energy for lower switching losses and reduced cooling efforts • Lowes

文件：1.52812 Mbytes 页数：15 Pages

Infineon

英飞凌

CoolSiC™ Automotive MOSFET 1200 V in HDSOP-22-3 package

Features • VDSS = 1200 V at Tvj = -55...175°C • IDDC = 34 A at TC = 25°C • RDS(on) = 80 mΩ at VGS = 20 V, Tvj = 25°C • New performance-optimized chip technology (Gen1p) with improved RDSon* A • Best in class switching energy for lower switching losses and reduced cooling efforts • Lowest dev

文件：1.58365 Mbytes 页数：16 Pages

Infineon

英飞凌

SiC N-Channel MOSFET

FEATURES ·Revolutionary Semiconductor Material-Silicon Carbide ·Very Low Switching Losses ·Fully Controlled dv/dt APPLICATIONS ·Power Factor Correction ·Switch Mode Power Supplies ·DC-DC Converters ·Battery Charges

文件：348.84 Kbytes 页数：3 Pages

ISC

无锡固电