丝印：12A080M1；Package：PG-HDSOP-22-3；CoolSiC™ Automotive MOSFET 1200 V in HDSOP-22-3 package

Features • VDSS = 1200 V at Tvj = -55...175°C • IDDC = 34 A at TC = 25°C • RDS(on) = 80 mΩ at VGS = 20 V, Tvj = 25°C • New performance-optimized chip technology (Gen1p) with improved RDSon* A • Best in class switching energy for lower switching losses and reduced cooling efforts • Lowest dev

文件：1.58365 Mbytes 页数：16 Pages

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汽车级 CoolSiC ™ MOSFET 1200 V，Q-DPAK（HDSOP-22-3），80 mΩ

采用 Q-DPAK 封装的 CoolSiC ™汽车 MOSFET 1200 V 专为满足 800V 汽车架构的 OBC/DC-DC 应用而设计。利用顶部冷却 (TSC) 技术，它可以为客户提供出色的热性能、更容易的组装和降低的系统成本。与背面冷却相比，TSC 提供了优化的 PCB 组装，从而消除了寄生效应并提供更低的杂散电感。 • 0V 关断\n• 爬电距离 4.8mm\n• 对称引线布局\n• .XT 技术;

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SiC N-Channel MOSFET

FEATURES ·Revolutionary Semiconductor Material-Silicon Carbide ·Very Low Switching Losses ·Fully Controlled dv/dt APPLICATIONS ·Power Factor Correction ·Switch Mode Power Supplies ·DC-DC Converters ·Battery Charges

文件：348.84 Kbytes 页数：3 Pages

ISC

无锡固电

Silicon Carbide MOSFET

文件：843.07 Kbytes 页数：17 Pages

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CoolSiC™ 1200 V SiC Trench MOSFET

Features • VDSS = 1200 V at Tvj = -55...175°C • IDDC = 31 A at TC = 25°C • RDS(on) = 80 mΩ at VGS = 20 V, Tvj = 25°C • New performance-optimized chip technology (Gen1p) with improved RDSon* A FOM • Increased recommended turn-on voltage (VGS(on) = 20 V) for lower RDS(on) • Best in class switc

文件：1.7576 Mbytes 页数：15 Pages

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