SiC N-Channel MOSFET

FEATURES ·Revolutionary Semiconductor Material-Silicon Carbide ·Very Low Switching Losses ·Fully Controlled dv/dt APPLICATIONS ·Power Factor Correction ·Switch Mode Power Supplies ·DC-DC Converters ·Battery Charges

文件：348.84 Kbytes 页数：3 Pages

ISC

无锡固电

丝印：A120M1080；Package：PG-TO247-3-41；Silicon Carbide MOSFET

文件：843.07 Kbytes 页数：17 Pages

Infineon

英飞凌

CoolSiC ™汽车 MOSFET 系列专为混合动力和电动汽车中当前和未来的车载充电器和 DC-DC 应用而开发

The AIMW120R080M1 is specifically designed to meet the high requirements demanded by the automotive industry with regards to reliability, quality and performance.\n The increase of switching frequency for a converter using CoolSiC™ MOSFETs can result in dramatically reduced volume and weight o • Revolutionary semiconductor material - Silicon Carbide\n• Very low switching losses\n• Threshold-free on state characteristic\n• IGBT-compatible driving voltage (15V for turn-on)\n• 0 V turn-off gate voltage\n• Benchmark gate threshold voltage, VGS(th)=4.5V\n• Fully controllable dv/dt\n• Commutati;

Infineon

英飞凌

CoolSiC™ 1200 V SiC Trench MOSFET

Features • VDSS = 1200 V at Tvj = -55...175°C • IDDC = 31 A at TC = 25°C • RDS(on) = 80 mΩ at VGS = 20 V, Tvj = 25°C • New performance-optimized chip technology (Gen1p) with improved RDSon* A FOM • Increased recommended turn-on voltage (VGS(on) = 20 V) for lower RDS(on) • Best in class switc

文件：1.7576 Mbytes 页数：15 Pages

Infineon

英飞凌

CoolSiC™ 1200 V SiC Trench MOSFET

Features • VDSS = 1200 V at Tvj = -55...175°C • IDDC = 31 A at TC = 25°C • RDS(on) = 80 mΩ at VGS = 20 V, Tvj = 25°C • New performance-optimized chip technology (Gen1p) with improved RDSon* A FOM • Increased recommended turn-on voltage (VGS(on) = 20 V) for lower RDS(on) • Best in class switc

文件：1.79801 Mbytes 页数：15 Pages

Infineon

英飞凌