AIMZH120R010M1T

丝印：A12M1T010；Package：PG-TO247-4-STD-NT6.7；CoolSiC™ 1200 V SiC Trench MOSFET

Features •VDSS=1200VatTvj=-55...175°C •IDDC=202AatTC=25°C •RDS(on)=8.7mΩatVGS=20V,Tvj=25°C •Newperformance-optimizedchiptechnology(Gen1p)withimprovedRDSon*AFOM •Increasedrecommendedturn-onvoltage(VGS(on)=20V)forlowerRDS(on) •Bestinclassswi

AIMZH120R010M1T

Silicon Carbide MOSFET Discretes; • Very low switching losses\n• Increased turn-on voltage VGS(on)= 20 V\n• Best in class switching energy\n• Lowest device capacitances\n• low Crss/Ciss ratio and high VGS(th) to avoid parasitic turn-on\n• Reduced total gate charge QGtot for lower driving power and losses\n• .XT die attach technology for best in class thermal performance\n• Sense pin for optimized switching performance\n• Suitable for HV creepage requirements\n• Thinner leads for reduced risk of solder bridges\n\n优势:\n• Efficiency improvement\n• Enabling higher frequency\n• Increased power density\n• Cooling effort reduction\n• Reduction of system complexity and cost\n;

With Infineon’s performance optimized chip technology (Gen1p), the SiC Mosfet features best-in-class switching performance, robustness against parasitic turn-ons, as well as improved RDSon and Rth(j-c). High power density, superior efficiency, bi-directional charging capabilities and significant reductions in system costs making it an ideal choice for on-board charger and DCDC applications.\n

AIMBG120R010M1

CoolSiC™1200VSiCTrenchMOSFET

Features •VDSS=1200VatTvj=-55...175°C •IDDC=205AatTC=25°C •RDS(on)=8.7mΩatVGS=20V,Tvj=25°C •Newperformance-optimizedchiptechnology(Gen1p)withimprovedRDSon*AFOM •Bestinclassswitchingenergyforlowerswitchinglossesandreducedcoolingefforts •Lowe

AIMZHN120R010M1T

CoolSiC™1200VSiCTrenchMOSFET

Features •VDSS=1200VatTvj=-55...175°C •IDDC=202AatTC=25°C •RDS(on)=8.7mΩatVGS=20V,Tvj=25°C •Newperformance-optimizedchiptechnology(Gen1p)withimprovedRDSon*AFOM •Increasedrecommendedturn-onvoltage(VGS(on)=20V)forlowerRDS(on) •Bestinclassswi