AIMZHN120R030M1T

CoolSiC™ 1200 V SiC Trench MOSFET

Features •VDSS=1200VatTvj=-55...175°C •IDDC=69AatTC=25°C •RDS(on)=30mΩatVGS=20V,Tvj=25°C •Newperformance-optimizedchiptechnology(Gen1p)withimprovedRDSon*AFOM •Increasedrecommendedturn-onvoltage(VGS(on)=20V)forlowerRDS(on) •Bestinclassswitc

AIMZH120R030M1T

CoolSiC™1200VSiCTrenchMOSFET

Features •VDSS=1200VatTvj=-55...175°C •IDDC=69AatTC=25°C •RDS(on)=30mΩatVGS=20V,Tvj=25°C •Newperformance-optimizedchiptechnology(Gen1p)withimprovedRDSon*AFOM •Increasedrecommendedturn-onvoltage(VGS(on)=20V)forlowerRDS(on) •Bestinclassswitc

IMBG120R030M1H

EiceDRIVER™1ED314xMU12F(1ED-X3Compact)

Features •Single-channelisolatedgatedriver •Forusewith600V/650V/1200V/1700V/2300VIGBTs,SiandSiCMOSFETs •Upto6.5Atypicalpeakoutputcurrent •45nspropagationdelaywith7nspart-to-partmatching(skew) •35Vabsolutemaximumoutputsupplyvoltage •Highcommon-mode

IMBG120R030M1H

CoolSiC??1200VSiCTrenchMOSFETwith.XTinterconnectiontechnology

IMW120R030M1H

CoolSiC??1200VSiCTrenchMOSFETSiliconCarbideMOSFET

IMZ120R030M1H

CoolSiC??1200VSiCTrenchMOSFETSiliconCarbideMOSFET

IMZA120R030M1H

CoolSiC™1200VSiCTrenchMOSFET:SiliconCarbideMOSFETwith.XTinterconnectiontechnology

Features •VDSS=1200VatTvj=25°C •IDDC=70AatTc=25°C •RDS(on)=30mΩatVGS=18V,Tvj=25°C •Verylowswitchinglosses •Shortcircuitwithstandtime3μs •Benchmarkgatethresholdvoltage,VGS(th)=4.2V •Robustagainstparasiticturnon,0Vturn-offgatevoltagecan

IMZA120R030M1H

SiCN-ChannelMOSFET

FEATURES ·VDSS=1200VatTJ=25°C ·HighBlockingVoltagewithLowOn-Resistance ·RDS(ON)=30mΩ（TYP.）@VGS=18V;TJ=25℃ ·Verylowswitchinglosses ·EasytoParallelandSimpletoDrive APPLICATIONS ·Generalpurposedrives(GPD) ·EV-Charging ·OnlineUPS/IndustrialUPS ·Stringinverters ·