丝印：A12M1T030；Package：PG-TO247-4-STD-NT6.7；CoolSiC™ 1200 V SiC Trench MOSFET

Features • VDSS = 1200 V at Tvj = -55...175°C • IDDC = 69 A at TC = 25°C • RDS(on) = 30 mΩ at VGS = 20 V, Tvj = 25°C • New performance-optimized chip technology (Gen1p) with improved RDSon* A FOM • Increased recommended turn-on voltage (VGS(on) = 20 V) for lower RDS(on) • Best in class switc

文件：1.73784 Mbytes 页数：15 Pages

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英飞凌

汽车级 1200V 碳化硅 (SiC) 沟槽功率 MOSFET，采用 TO247-4L（细引线），30mΩ

凭借英飞凌性能优化的芯片技术 (Gen1p)，SiC Mosfet 具有一流的开关性能、抗寄生导通的稳健性以及改进的 RDSon 和 Rth(jc)。高功率密度、卓越的效率、双向充电功能以及显著降低的系统成本使其成为车载充电器和 DCDC 应用的理想选择。 • 极低的开关损耗\n • 开启电压增加 VGS(on)= 20 V\n • 一流的开关能量\n • 最低的设备电容\n • 低 Crss/Ciss 比和高 VGS(th) 可避免寄生开启\n • 降低总栅极电荷 QGtot，从而降低驱动功率和损耗\n • .XT 芯片贴装技术，实现一流的热性能\n • 用于优化开关性能的感测引脚\n • 适合高压爬电要求\n • 更细的引脚可降低焊桥风险;

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英飞凌

CoolSiC™ 1200 V SiC Trench MOSFET

Features • VDSS = 1200 V at Tvj = -55...175°C • IDDC = 69 A at TC = 25°C • RDS(on) = 30 mΩ at VGS = 20 V, Tvj = 25°C • New performance-optimized chip technology (Gen1p) with improved RDSon* A FOM • Increased recommended turn-on voltage (VGS(on) = 20 V) for lower RDS(on) • Best in class switc

文件：1.7688 Mbytes 页数：15 Pages

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英飞凌

CoolSiC??1200V SiC Trench MOSFET with .XT interconnection technology

文件：1.26252 Mbytes 页数：17 Pages

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英飞凌

EiceDRIVER™ 1ED314xMU12F (1ED-X3 Compact)

Features • Single-channel isolated gate driver • For use with 600 V/650 V/1200 V/1700 V/2300 V IGBTs, Si and SiC MOSFETs • Up to 6.5 A typical peak output current • 45 ns propagation delay with 7 ns part-to-part matching (skew) • 35 V absolute maximum output supply voltage • High common-mode

文件：4.24411 Mbytes 页数：34 Pages

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英飞凌