丝印：AS80MM1；Package：PG-TO263-7-HV-ND5.8；CoolSiC™ 1200 V SiC Trench MOSFET

Features • VDSS = 1200 V at Tvj = -55...175 °C • IDDC = 30 A at TC = 25°C • RDS(on) = 80 mΩ at VGS = 20 V, Tvj = 25°C • New performance-optimized chip technology (Gen1p) with improved RDSon* A FOM • Best in class switching energy for lower switching losses and reduced cooling efforts • Lowes

文件：1.52812 Mbytes 页数：15 Pages

Infineon

英飞凌

汽车级 1200V 碳化硅 (SiC) 沟槽功率 MOSFET，采用 D2PAK-7L 封装，160mΩ

凭借英飞凌性能优化的芯片技术 (Gen1p)，SiC Mosfet 具有一流的开关性能、抗寄生导通的稳健性以及改进的 RDSon 和 Rth(jc)。高功率密度、卓越的效率、双向充电功能以及显著降低的系统成本使其成为车载充电器和 DCDC 应用的理想选择。 • 革命性的半导体材料——碳化硅\n • 极低的开关损耗\n • 无阈值开启状态特性\n • 0V 关断栅极电压\n • 基准栅极阈值电压，VGS(th)=4.5V\n• 完全可控的 dv/dt\n • 换向稳健的体二极管，可用于同步整流\n • 与温度无关的关断开关损耗\n • 用于优化开关性能的感测引脚\n • 适合高压爬电要求\n • XT 互连技术，实现一流的热性能;

Infineon

英飞凌

CoolSiC™ Automotive MOSFET 1200 V in HDSOP-22-3 package

Features • VDSS = 1200 V at Tvj = -55...175°C • IDDC = 34 A at TC = 25°C • RDS(on) = 80 mΩ at VGS = 20 V, Tvj = 25°C • New performance-optimized chip technology (Gen1p) with improved RDSon* A • Best in class switching energy for lower switching losses and reduced cooling efforts • Lowest dev

文件：1.58365 Mbytes 页数：16 Pages

Infineon

英飞凌

Silicon Carbide MOSFET

文件：843.07 Kbytes 页数：17 Pages

Infineon

英飞凌

SiC N-Channel MOSFET

FEATURES ·Revolutionary Semiconductor Material-Silicon Carbide ·Very Low Switching Losses ·Fully Controlled dv/dt APPLICATIONS ·Power Factor Correction ·Switch Mode Power Supplies ·DC-DC Converters ·Battery Charges

文件：348.84 Kbytes 页数：3 Pages

ISC

无锡固电