AIMBG120R080M1中文资料英飞凌数据手册PDF规格书

Features

• VDSS = 1200 V at Tvj = -55...175 °C

• IDDC = 30 A at TC = 25°C

• RDS(on) = 80 mΩ at VGS = 20 V, Tvj = 25°C

• New performance-optimized chip technology (Gen1p) with improved RDSon* A FOM

• Best in class switching energy for lower switching losses and reduced cooling efforts

• Lowest device capacitances for higher switching speeds and higher power density

• A combination of low Crss/Ciss ratio and high VGS(th) to avoid parasitic turn-on and enable unipolar

gate driving

• Reduced total gate charge QGtot for lower driving power and losses

• Increased recommended turn-on voltage (VGS(on) = 20 V) for lower RDS(on)

• .XT die attach technology for best in class thermal performance

• Low package stray inductance for faster and cleaner switching

• Sense (Kelvin) source pin for better gate control and reduced switching losses

• Minimal creepage distance 5.85 mm (material group II) to fit 800 V applications without coating

• SMT package for automated assembly and reduced system costs

Potential applications

• On-board charger

• DC/DC converter

• Auxiliary drives

Product validation

• Qualified for Automotive Applications. Product Validation according to AEC-Q100/101

Description

Pin definition:

• Pin 1 - Gate

• Pin 2 - Kelvin sense contact

• Pin 3…7 - Source

• Tab - Drain

Note: The source and sense pins are not exchangeable, their exchange might lead to malfunction