AFGY120T65SPD-B4数据手册分立半导体产品的晶体管-UGBT、MOSFET-单规格书PDF

描述 Description

AFGY120T65SPD-B4 is a 650 V 120 A IGBT based on trench field stop 3 technology. This product is binned based on Vcesat and Vth i.e. thetop side marking on each individual unit defines the range of Vcesat and Vth the particular device has. This allows customers to assemble units in parallel that have very close parameter distribution. This enables better current sharing in application.

特性 Features

• Vcesat and Vth Binning
• allows better current sharing and thermal management in application
• Automotive Qualified
• Very Low Saturation Voltage : VCE(sat) = 1.5 V(Typ.) @ IC = 120 A
• Maximum Junction Temperature: TJ = 175°C
• Positive Temperature Co-efficient
• Tight Parameter Distribution
• High Input Impedance
• 100% of the Parts are Dynamically Tested
• Short circuit ruggedness > 6μs @ 25 oC
• Copacked with Soft, Fast Recovery Extremefast Diode
• This Device is Pb-Free, Halogen Free/BFR Free and are RoHS Compliant

应用 Application

• EV tractionmotor inverter
• Electric vehicles
• Hybrid Electric vehicles

简介

AFGY120T65SPD-B4属于分立半导体产品的晶体管-UGBT、MOSFET-单。由制造生产的AFGY120T65SPD-B4晶体管 - UGBT、MOSFET - 单单 IGBT（绝缘栅双极晶体管）是一种具有三个端子的多层半导体器件，能够处理大电流，具有快速开关特性。其特征参数包括类型、集射极击穿电压、集电极电流、脉冲集电极电流、VCE(ON)、开关能量和栅极电荷。