AFGHL50T65SQD中文资料AEC 101 Qualified, 650V, 50A Fieldstop 4 trench IGBT数据手册ONSEMI规格书

描述 Description

Using the novel field stop 4th generation high speed IGBT technology. AFGHL50T65SQD which is AEC Q101 qualified offers the optimum performance for both hard and soft switching topology in automotive application.

特性 Features

• AEC Q101 qualified
• Applicable to automotive aplication
• Maximum Junction Temperature, Tj=175°C
• Higher reliability
• Very low switching and conduction losses
• Positive temperature co-efficient
• Tight parameter distribution
• Fast Switching
• Low Saturation Voltage: Vcesat=1.6V(Typ.)@Ic=75A
• 100% of the parts are tested for ILM

应用 Application

• PFC
• Hard Switching
• DC-DC Converter
• Automotive
• xEV On & Off board charger
• Industrial inverter
• PTC

简介

AFGHL50T65SQD属于分立半导体产品的晶体管-UGBT、MOSFET-单。由制造生产的AFGHL50T65SQD晶体管 - UGBT、MOSFET - 单单 IGBT（绝缘栅双极晶体管）是一种具有三个端子的多层半导体器件，能够处理大电流，具有快速开关特性。其特征参数包括类型、集射极击穿电压、集电极电流、脉冲集电极电流、VCE(ON)、开关能量和栅极电荷。