AFGY100T65SPD数据手册分立半导体产品的晶体管-UGBT、MOSFET-单规格书PDF

描述 Description

AFGY100T65SPD which is AEC Q101 qualified IGBT which offers very low conduction and switch losses for a high efficiency operation in various applications, rugged transient reliability and low EMI. The part also offers an advantage of outstanding parallel operation performance with balance current sharing.

特性 Features

• AEC Q101 qualified
• Suitable for automotive applications
• Low Vcesat voltage
• low conduction losses
• Tight parameter distribution
• better current sharing during paralleling operations
• Soft recovery diode
• Low EMI

应用 Application

• HEV/EV traction motors
• Hybrid Electric vehicles
• Electric vehicles

简介

AFGY100T65SPD属于分立半导体产品的晶体管-UGBT、MOSFET-单。由制造生产的AFGY100T65SPD晶体管 - UGBT、MOSFET - 单单 IGBT（绝缘栅双极晶体管）是一种具有三个端子的多层半导体器件，能够处理大电流，具有快速开关特性。其特征参数包括类型、集射极击穿电压、集电极电流、脉冲集电极电流、VCE(ON)、开关能量和栅极电荷。