AFGHL50T65SQDC数据手册分立半导体产品的晶体管-UGBT、MOSFET-单规格书PDF

描述 Description

Using novel field stop IGBT and SiC SBD technology, On semiconductor's new series of hybrid IGBTs offer the optimum performance for hard switching application.

特性 Features

• Automotive Qualified
• Very low switching and conduction losses
• Maximum Junction Temperature, Tj=175°C
• Positive temperature co-efficient
• 100% of the parts are dynamically tested
• Copacked with SiC schottky barrier diode
• Tight parameter distribution

应用 Application

• Automotive
• PFC
• Industrial Inverter
• On Board Charger
• DC-DC Converter

简介

AFGHL50T65SQDC属于分立半导体产品的晶体管-UGBT、MOSFET-单。由制造生产的AFGHL50T65SQDC晶体管 - UGBT、MOSFET - 单单 IGBT（绝缘栅双极晶体管）是一种具有三个端子的多层半导体器件，能够处理大电流，具有快速开关特性。其特征参数包括类型、集射极击穿电压、集电极电流、脉冲集电极电流、VCE(ON)、开关能量和栅极电荷。