AFGHL75T65SQDC中文资料IGBT with SiC copack diode数据手册ONSEMI规格书

描述 Description

Using the novel field stop 4th generation IGBT technology and the
1.5th generation SiC Schottky Diode technology, AFGHL75T65SQDC
offers the optimum performance with both low conduction and
switching losses for high efficiency operations in various applications,
especially totem pole bridgeless PFC and Inverter

特性 Features

• SiC schottky co-pack diode
• zero diode recovery losses
• Fast switching IGBT
• Low Eon and Eoff losses
• AEC-Q101 qualified
• automotive compatible
• Tight parameter distribution and Positive temperature co-efficient
• easy paralelleing

应用 Application

• Totem pole bridgeless PFC
• On Board chargers
• HV DC-DC converters
• Hybrid Electric Vehicles
• Battery electric vehicles

简介

AFGHL75T65SQDC属于分立半导体产品的晶体管-UGBT、MOSFET-单。由制造生产的AFGHL75T65SQDC晶体管 - UGBT、MOSFET - 单单 IGBT（绝缘栅双极晶体管）是一种具有三个端子的多层半导体器件，能够处理大电流，具有快速开关特性。其特征参数包括类型、集射极击穿电压、集电极电流、脉冲集电极电流、VCE(ON)、开关能量和栅极电荷。