丝印：ADM200N04G；Package：TO-263-2；N-Channel Enhancement Mode Field Effect Transistor

Features: ● Low Gate Charge for Fast Switching Application ● Low RDS(ON) to Minimize Conductive Loss ● 100% EAS Guaranteed ● Optimized V(BR)DSS Ruggedness ● Lead-Free,RoHS Compliant Description: The ADM200N04G series MOSFETs is a new technology, which combines an innovative super junc

文件：1.48695 Mbytes 页数：6 Pages

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丝印：ADM200N06；Package：TO-220C；N-Channel Enhancement Mode Field Effect Transistor

Features: ● Low Gate Charge for Fast Switching Application ● Low RDS(ON) to Minimize Conductive Loss ● 100% EAS Guaranteed ● Optimized V(BR)DSS Ruggedness ● Lead-Free,RoHS Compliant Description: The ADM200N06 series MOSFETs is a new technology, which combines an innovative super junct

文件：1.10957 Mbytes 页数：6 Pages

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丝印：ADM200N06G；Package：TO-263-2；N-Channel Enhancement Mode Field Effect Transistor

Features: ● Low Gate Charge for Fast Switching Application ● Low RDS(ON) to Minimize Conductive Loss ● 100% EAS Guaranteed ● Optimized V(BR)DSS Ruggedness ● Lead-Free,RoHS Compliant Description: The ADM200N06G series MOSFETs is a new technology, which combines an innovative super junc

文件：1.10951 Mbytes 页数：6 Pages

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丝印：ADM250N04；Package：TO-220C；N-Channel Enhancement Mode Field Effect Transistor

Features: ● Low Gate Charge for Fast Switching Application ● Low RDS(ON) to Minimize Conductive Loss ● 100% EAS Guaranteed ● Optimized V(BR)DSS Ruggedness ● Lead-Free,RoHS Compliant Description: The ADM250N04 series MOSFETs is a new technology, which combines an innovative super junct

文件：645.34 Kbytes 页数：6 Pages

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丝印：ADM250N04G；Package：TO-263-2；N-Channel Enhancement Mode Field Effect Transistor

Features: ● Low Gate Charge for Fast Switching Application ● Low RDS(ON) to Minimize Conductive Loss ● 100% EAS Guaranteed ● Optimized V(BR)DSS Ruggedness ● Lead-Free,RoHS Compliant Description: The ADM250N04G series MOSFETs is a new technology, which combines an innovative super junc

文件：645.27 Kbytes 页数：6 Pages

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丝印：ADM265N04；Package：TO-220C；N-Channel Enhancement Mode Field Effect Transistor

Features: ● Low Gate Charge for Fast Switching Application ● Low RDS(ON) to Minimize Conductive Loss ● 100% EAS Guaranteed ● Fast Recovery Body Diode ● Lead-Free,RoHS Compliant Description: The ADM265N04 series MOSFETs is a new technology, which combines an innovative super junction t

文件：1.41373 Mbytes 页数：7 Pages

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丝印：ADM3080E；Package：TO-252-2；N -C hannel E nhancem ent M ode Field E ffect Transistor

Features: ● Low Gate Charge for Fast Switching Application ● Low RDS(ON) to Minimize Conductive Loss ● 100% EAS Guaranteed ● Optimized V(BR)DSS Ruggedness ● Lead-Free,RoHS Compliant Description: The ADM3080E uses advanced trench technology and design to provide excellent RDS(ON) with

文件：1.02144 Mbytes 页数：7 Pages

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丝印：ADM30P10E；Package：TO-252-2；P-Channel Logic Level Enhancement Mode Field Effect Transistor

Features: ● Low Gate Charge for Fast Switching Application ● Low RDS(ON) to Minimize Conductive Loss ● Reliable and Rugged ● 100% EAS Guaranteed

文件：881.13 Kbytes 页数：6 Pages

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丝印：ADM35P06E；Package：TO-252-2；P-Channel Logic Level Enhancement Mode Field Effect Transistor

Features: ● Low Gate Charge for Fast Switching Application ● Fast Switching ● Improved dv/dt Capability ● Green Device Available Description: These P-Channel enhancement mode power field effect transistors are using trench DMOS technology. design to provide excellent RDS(ON) with low gate

文件：520.61 Kbytes 页数：5 Pages

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丝印：ADM380N04；Package：TO-220C；N-Channel Enhancement Mode Field Effect Transistor

Features: ● Low Gate Charge for Fast Switching Application ● Low RDS(ON) to Minimize Conductive Loss ● 100% EAS Guaranteed ● Fast Recovery Body Diode ● Lead-Free,RoHS Compliant Description: The ADM380N04 series MOSFETs is a new technology, which combines an innovative super junction t

文件：994.11 Kbytes 页数：7 Pages

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