ADM200N04G芯片代码丝印对应型号-114ic电子网

型号	下载订购	功能描述	制造商上传企业	LOGO
ADM200N04G	文件：1.48695 Mbytes Page：6 Pages	丝印：ADM200N04G；Package：TO-263-2；N-Channel Enhancement Mode Field Effect Transistor Features: ● Low Gate Charge for Fast Switching Application ● Low RDS(ON) to Minimize Conductive Loss ● 100% EAS Guaranteed ● Optimized V(BR)DSS Ruggedness ● Lead-Free,RoHS Compliant Description: The ADM200N04G series MOSFETs is a new technology, which combines an innovative super junc 文件：1.48695 Mbytes 页数：6 Pages	ADV 爱德微	ADV
ADM200N04G	文件：1.48695 Mbytes Page：6 Pages	丝印：ADM200N04G；Package：TO-263-2；N-Channel Enhancement Mode Field Effect Transistor Features: ● Low Gate Charge for Fast Switching Application ● Low RDS(ON) to Minimize Conductive Loss ● 100% EAS Guaranteed ● Optimized V(BR)DSS Ruggedness ● Lead-Free,RoHS Compliant Description: The ADM200N04G series MOSFETs is a new technology, which combines an innovative super junc 文件：1.48695 Mbytes 页数：6 Pages	ADV 爱德微	ADV

更多ADM200N04G供应商更新时间2025-10-31 11:10:00