ADM35P06E芯片代码丝印对应型号-114ic电子网

型号	下载订购	功能描述	制造商上传企业	LOGO
ADM35P06E	文件：520.61 Kbytes Page：5 Pages	丝印：ADM35P06E；Package：TO-252-2；P-Channel Logic Level Enhancement Mode Field Effect Transistor Features: ● Low Gate Charge for Fast Switching Application ● Fast Switching ● Improved dv/dt Capability ● Green Device Available Description: These P-Channel enhancement mode power field effect transistors are using trench DMOS technology. design to provide excellent RDS(ON) with low gate 文件：520.61 Kbytes 页数：5 Pages	ADV 爱德微	ADV
ADM35P06E	文件：520.61 Kbytes Page：5 Pages	丝印：ADM35P06E；Package：TO-252-2；P-Channel Logic Level Enhancement Mode Field Effect Transistor Features: ● Low Gate Charge for Fast Switching Application ● Fast Switching ● Improved dv/dt Capability ● Green Device Available Description: These P-Channel enhancement mode power field effect transistors are using trench DMOS technology. design to provide excellent RDS(ON) with low gate 文件：520.61 Kbytes 页数：5 Pages	ADV 爱德微	ADV

更多ADM35P06E供应商更新时间2025-9-8 15:25:00