丝印：ADM380N04；Package：TO-220C；N-Channel Enhancement Mode Field Effect Transistor

Features: ● Low Gate Charge for Fast Switching Application ● Low RDS(ON) to Minimize Conductive Loss ● 100% EAS Guaranteed ● Fast Recovery Body Diode ● Lead-Free,RoHS Compliant Description: The ADM380N04 series MOSFETs is a new technology, which combines an innovative super junction t

文件：994.11 Kbytes 页数：7 Pages

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丝印：ADM380N04G；Package：TO-263-2；N-Channel Enhancement Mode Field Effect Transistor

Features: ● Low Gate Charge for Fast Switching Application ● Low RDS(ON) to Minimize Conductive Loss ● 100% EAS Guaranteed ● Fast Recovery Body Diode ● Lead-Free,RoHS Compliant Description: The ADM380N04 series MOSFETs is a new technology, which combines an innovative super junction t

文件：993.46 Kbytes 页数：7 Pages

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丝印：ADM380N04；Package：TO-220C；N-Channel Enhancement Mode Field Effect Transistor

Features: ● Low Gate Charge for Fast Switching Application ● Low RDS(ON) to Minimize Conductive Loss ● 100% EAS Guaranteed ● Fast Recovery Body Diode ● Lead-Free,RoHS Compliant Description: The ADM380N04 series MOSFETs is a new technology, which combines an innovative super junction t

文件：994.11 Kbytes 页数：7 Pages

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丝印：ADM380N04G；Package：TO-263-2；N-Channel Enhancement Mode Field Effect Transistor

Features: ● Low Gate Charge for Fast Switching Application ● Low RDS(ON) to Minimize Conductive Loss ● 100% EAS Guaranteed ● Fast Recovery Body Diode ● Lead-Free,RoHS Compliant Description: The ADM380N04 series MOSFETs is a new technology, which combines an innovative super junction t

文件：993.46 Kbytes 页数：7 Pages

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