ADM45P06芯片代码丝印对应型号-114ic电子网

型号	下载订购	功能描述	制造商上传企业	LOGO
ADM45P06	文件：462.23 Kbytes Page：5 Pages	丝印：ADM45P06；Package：TO-220C；P-Channel Logic Level Enhancement Mode Field Effect Transistor Features: ● Low Gate Charge for Fast Switching Application ● Fast Switching ● Improved dv/dt Capability ● Green Device Available Description: The ADM45P06 is the high cell density trenched P-ch MOSFETs, design to provide excellent RDS(ON) with low gate charge.provide superior switching per 文件：462.23 Kbytes 页数：5 Pages	ADV 爱德微	ADV
ADM45P06	文件：462.23 Kbytes Page：5 Pages	丝印：ADM45P06；Package：TO-220C；P-Channel Logic Level Enhancement Mode Field Effect Transistor Features: ● Low Gate Charge for Fast Switching Application ● Fast Switching ● Improved dv/dt Capability ● Green Device Available Description: The ADM45P06 is the high cell density trenched P-ch MOSFETs, design to provide excellent RDS(ON) with low gate charge.provide superior switching per 文件：462.23 Kbytes 页数：5 Pages	ADV 爱德微	ADV

更多ADM45P06供应商更新时间2025-11-4 9:01:00