ADM50N06芯片代码丝印对应型号-114ic电子网

型号	下载订购	功能描述	制造商上传企业	LOGO
ADM50N06	文件：952.54 Kbytes Page：6 Pages	丝印：ADM50N06；Package：TO-220C；N-Channel Enhancement Mode Field Effect Transistor Features: ● Low Gate Charge for Fast Switching Application ● Low RDS(ON) to Minimize Conductive Loss ● 100% EAS Guaranteed ● Optimized V(BR)DSS Ruggedness ● Lead-Free,RoHS Compliant Description: The ADM50N06 uses advanced trench technology and design to provide excellent RDS(ON) with 文件：952.54 Kbytes 页数：6 Pages	ADV 爱德微	ADV
ADM50N06	文件：952.54 Kbytes Page：6 Pages	丝印：ADM50N06；Package：TO-220C；N-Channel Enhancement Mode Field Effect Transistor Features: ● Low Gate Charge for Fast Switching Application ● Low RDS(ON) to Minimize Conductive Loss ● 100% EAS Guaranteed ● Optimized V(BR)DSS Ruggedness ● Lead-Free,RoHS Compliant Description: The ADM50N06 uses advanced trench technology and design to provide excellent RDS(ON) with 文件：952.54 Kbytes 页数：6 Pages	ADV 爱德微	ADV
ADM50N06E	文件：510.34 Kbytes Page：6 Pages	N-Channel Enhancement Mode Field Effect Transistor 文件：510.34 Kbytes 页数：6 Pages	ADV 爱德微	ADV

更多ADM50N06供应商更新时间2025-9-10 9:53:00