ADM40N03E芯片代码Marking-114ic电子网

型号	下载订购	功能描述	制造商上传企业	LOGO
ADM40N03E	文件：576.52 Kbytes Page：7 Pages	丝印：ADM40N03E；Package：TO-252-2；N-Channel Enhancement Mode Field Effect Transistor Features: ● Low Gate Charge for Fast Switching Application ● Low RDS(ON) to Minimize Conductive Loss ● 100% EAS Guaranteed ● Optimized V(BR)DSS Ruggedness ● Lead-Free,RoHS Compliant Description: The ADM40N30E uses advanced trench technology and design to provide excellent RDS(ON) with 文件：576.52 Kbytes 页数：7 Pages	ADV 爱德微	ADV
ADM40N03E	文件：576.52 Kbytes Page：7 Pages	丝印：ADM40N03E；Package：TO-252-2；N-Channel Enhancement Mode Field Effect Transistor Features: ● Low Gate Charge for Fast Switching Application ● Low RDS(ON) to Minimize Conductive Loss ● 100% EAS Guaranteed ● Optimized V(BR)DSS Ruggedness ● Lead-Free,RoHS Compliant Description: The ADM40N30E uses advanced trench technology and design to provide excellent RDS(ON) with 文件：576.52 Kbytes 页数：7 Pages	ADV 爱德微	ADV

更多ADM40N03E供应商更新时间2025-9-8 13:02:00