丝印：ADM3080E；Package：TO-252-2；N -C hannel E nhancem ent M ode Field E ffect Transistor

Features: ● Low Gate Charge for Fast Switching Application ● Low RDS(ON) to Minimize Conductive Loss ● 100% EAS Guaranteed ● Optimized V(BR)DSS Ruggedness ● Lead-Free,RoHS Compliant Description: The ADM3080E uses advanced trench technology and design to provide excellent RDS(ON) with

文件：1.02144 Mbytes 页数：7 Pages

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爱德微

丝印：ADM3080E；Package：TO-252-2；N -C hannel E nhancem ent M ode Field E ffect Transistor

Features: ● Low Gate Charge for Fast Switching Application ● Low RDS(ON) to Minimize Conductive Loss ● 100% EAS Guaranteed ● Optimized V(BR)DSS Ruggedness ● Lead-Free,RoHS Compliant Description: The ADM3080E uses advanced trench technology and design to provide excellent RDS(ON) with

文件：1.02144 Mbytes 页数：7 Pages

ADV

爱德微