丝印：ADM380N04G；Package：TO-263-2；N-Channel Enhancement Mode Field Effect Transistor

Features: ● Low Gate Charge for Fast Switching Application ● Low RDS(ON) to Minimize Conductive Loss ● 100% EAS Guaranteed ● Fast Recovery Body Diode ● Lead-Free,RoHS Compliant Description: The ADM380N04 series MOSFETs is a new technology, which combines an innovative super junction t

文件：993.46 Kbytes 页数：7 Pages

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丝印：ADM40N03E；Package：TO-252-2；N-Channel Enhancement Mode Field Effect Transistor

Features: ● Low Gate Charge for Fast Switching Application ● Low RDS(ON) to Minimize Conductive Loss ● 100% EAS Guaranteed ● Optimized V(BR)DSS Ruggedness ● Lead-Free,RoHS Compliant Description: The ADM40N30E uses advanced trench technology and design to provide excellent RDS(ON) with

文件：576.52 Kbytes 页数：7 Pages

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丝印：ADM45P06；Package：TO-220C；P-Channel Logic Level Enhancement Mode Field Effect Transistor

Features: ● Low Gate Charge for Fast Switching Application ● Fast Switching ● Improved dv/dt Capability ● Green Device Available Description: The ADM45P06 is the high cell density trenched P-ch MOSFETs, design to provide excellent RDS(ON) with low gate charge.provide superior switching per

文件：462.23 Kbytes 页数：5 Pages

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丝印：ADM4N65；Package：TO-220；650V N-Channel Enhancement Mode Field Effect Transistor

FEATURES • Fast switching • 100% avalanche tested • Improved dv/dt capability APPLICATIONS • Switch Mode Power Supply (SMPS) • Uninterruptible Power Supply (UPS) • Power Factor Correction (PFC)

文件：490.08 Kbytes 页数：8 Pages

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丝印：ADM4N65D；Package：TO-251；650V N-Channel Enhancement Mode Field Effect Transistor

FEATURES • Fast switching • 100% avalanche tested • Improved dv/dt capability APPLICATIONS • Switch Mode Power Supply (SMPS) • Uninterruptible Power Supply (UPS) • Power Factor Correction (PFC)

文件：490.08 Kbytes 页数：8 Pages

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丝印：ADM4N65E；Package：TO-252；650V N-Channel Enhancement Mode Field Effect Transistor

FEATURES • Fast switching • 100% avalanche tested • Improved dv/dt capability APPLICATIONS • Switch Mode Power Supply (SMPS) • Uninterruptible Power Supply (UPS) • Power Factor Correction (PFC)

文件：490.08 Kbytes 页数：8 Pages

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丝印：ADM4N65F；Package：TO-220F；650V N-Channel Enhancement Mode Field Effect Transistor

FEATURES • Fast switching • 100% avalanche tested • Improved dv/dt capability APPLICATIONS • Switch Mode Power Supply (SMPS) • Uninterruptible Power Supply (UPS) • Power Factor Correction (PFC)

文件：490.08 Kbytes 页数：8 Pages

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丝印：ADM50N06；Package：TO-220C；N-Channel Enhancement Mode Field Effect Transistor

Features: ● Low Gate Charge for Fast Switching Application ● Low RDS(ON) to Minimize Conductive Loss ● 100% EAS Guaranteed ● Optimized V(BR)DSS Ruggedness ● Lead-Free,RoHS Compliant Description: The ADM50N06 uses advanced trench technology and design to provide excellent RDS(ON) with

文件：952.54 Kbytes 页数：6 Pages

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丝印：ADM75N06；Package：TO-220C；N-Channel Enhancement Mode Field Effect Transistor

Features: ● Low Gate Charge for Fast Switching Application ● Low RDS(ON) to Minimize Conductive Loss ● 100% EAS Guaranteed ● Optimized V(BR)DSS Ruggedness ● Lead-Free,RoHS Compliant Description: The ADM75N06 uses advanced trench technology and design to provide excellent RDS(ON) with

文件：1.01048 Mbytes 页数：6 Pages

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丝印：ADM75N10；Package：TO-220C；N-Channel Enhancement Mode Field Effect Transistor

Features: ● Low Gate Charge for Fast Switching Application ● Low RDS(ON) to Minimize Conductive Loss ● 100% EAS Guaranteed ● Optimized V(BR)DSS Ruggedness ● Lead-Free,RoHS Compliant Description: The ADM75N10 uses advanced trench technology and design to provide excellent RDS(ON) with

文件：566.02 Kbytes 页数：6 Pages

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