丝印：ADM200N06G；Package：TO-263-2；N-Channel Enhancement Mode Field Effect Transistor

Features: ● Low Gate Charge for Fast Switching Application ● Low RDS(ON) to Minimize Conductive Loss ● 100% EAS Guaranteed ● Optimized V(BR)DSS Ruggedness ● Lead-Free,RoHS Compliant Description: The ADM200N06G series MOSFETs is a new technology, which combines an innovative super junc

文件：1.10951 Mbytes 页数：6 Pages

ADV

爱德微

N-Channel Enhancement Mode Power MOSFET

Description The G200N06K uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：831.95 Kbytes 页数：6 Pages

GOFORD

谷峰半导体

HiPerFET Power MOSFETs

HiPerFET™ Power MOSFETs N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr Features • International standard packages • miniBLOC with Aluminium nitride isolation • Low RDS (on) HDMOSTM process • Rugged polysilicon gate cell structure • Unclamped Inductive Switching (UIS) rated

文件：188.46 Kbytes 页数：4 Pages

IXYS

艾赛斯

PolarHT Power MOSFET

文件：155.54 Kbytes 页数：5 Pages

IXYS

艾赛斯